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? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? surface mount features description these ultrafast,soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode fred

hfa40hf60 www.irf.com 1 parameter max. units v r cathode to anode voltage 600 v i f(av) continuous forward current, t c = 100c 22 i fsm single pulse forward current, t c = 25c 225 p d @ t c = 25c maximum power dissipation 83 w t j, t stg operating junction and storage temperature range -55 to +150 c absolute maximum ratings case style smd-1 v r = 600v v f = 1.75v q rr = 290nc di (rec)m /dt = 400a/s anode cathode (isolated base) pd-20381b
2 www.irf.com hfa40hf60 electrical characteristics @ t j = 25c (unless otherwise specified) dynamic recovery characteristics @ t j = 25c (unless otherwise specified) thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case ? 1.5 wt weight 2.6 ? g c/w ! parameter min. typ. max. units test conditions t rr1 reverse recovery time ? 60 97 ns t j = 25c see fig. t rr2 ? 110 165 t j = 125c 5 i f = 22a i rrm1 peak recovery current ? 5.2 7.8 t j = 25c see fig. i rrm2 ? 8.5 13 t j = 125c 6 v r = 200v q rr1 reverse recovery charge ? 190 290 t j = 25c see fig. q rr2 ? 560 840 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 270 400 t j = 25c see fig. di (rec)m /dt2 during t b ? 170 250 t j = 125c 8 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ? ? v i r = 100a v f forward voltage ? 1.63 1.75 i f = 22a see fig. 1 ? 2.07 2.25 v i f = 45a ? 1.52 1.64 i f = 22a, t j = 125c i r max reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = 480v, t j = 125c c t junction capacitance, see fig. 3 ? 56 59 pf v r = 200v l s series inductance ? 5.9 ? nh measured from center of cathode pad the center of anode pad
www.irf.com 3 hfa40hf60 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 10 100 1000 1 10 100 1000 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a 1 10 100 0.0 1.0 2.0 3.0 4.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 100 200 300 400 500 600 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 r e v e r s e c u r r e n t - i r ( a ) 150c -55c 25c 125c
4 www.irf.com hfa40hf60 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt fig. 6 - typical recovery current vs. di f /dt 0 30 60 90 120 150 100 1000 f di /dt - (a/s) i = 44a f i = 22a f i = 11a f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i = 44a f i = 22a f i = 11a f v = 200v t = 125c t = 25c r j j 0 400 800 1200 1600 2000 100 1000 f di /dt - (a/s) i = 44a i = 22a i = 11a f f f v = 200v t = 125c t = 25c r j j " # $ % # $% & # $% ' $ % ('# $ !% 100 1000 10000 100 1000 f di /dt - (a/s) i = 11a f i = 22a f i = 44a f v = 200v t = 125c t = 25c r j j
www.irf.com 5 hfa40hf60

fig. 10 - reverse recovery waveformand definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f
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reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? smd-1 1 = cathode 2 = anode 3 = n / c pad assignments ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2013

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